>> Fabricated tungsten part

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  Tungsten Heating elements

  Parameters Sapphire crystal growth furnace thermal field: large size manufacturing capacity.  Diameter Length Purity Density Service temp Vapor pressure blackness Coefficient of thermal expansion 3-100mm 3~3000mm 99.95% 19.2g/cm3 min. 3400 ℃  10-6 Pa 0.295 4.98*10-6

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  Special Shape Parts

  Crucibles and other parts for Sapphire crystal growth and rare-earth melting

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  Tungsten Cathode and anode

  Parameters Electrochemical Performance  

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  WVM (tungsten-vacuum-metallizing)

  Parameters  Physical Property Description Coating Composition Pure tungsten film Density 19.3 g/cm³ Melting Point 3,422°C (6,192°F) Hardness 7.5-7.6 (Mohs hardness) Thermal Conductivity 173 W/m·K Specific Heat Capacity 0.134 J/g·K Linear Expansion Coefficient 4.5 x 10^-6 /K Electrical Resistivity 5.6 x 10^-8 Ω·m (at 20°C) Corrosion Resistance Exhibits good resistance to acids, alkalis, and solvents

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  Tungsten Electrodes

  Parameters  Physical Property Value Melting Point 3,422°C (6,192°F) Density 19.3 g/cm³ Tensile Strength 550 – 900 MPa Hardness (Vickers) 250 – 400 HV Young’s Modulus 411 GPa Coefficient of Thermal Expansion 4.5 x 10^-6 /°C Thermal Conductivity 173 W/m·K

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  Tungsten Cathode and anode

  Parameters Electrochemical Performance