Manufacturing Range (Tungsten Planar Sputtering Target)
|
Rectangle |
Length (mm) |
Width (mm) |
Thickness(mm) |
Custom Made |
|
10 – 3000 |
10 – 800 |
1.0 – 50.8 |
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|
Circular |
Diameter (mm) |
Thickness (mm) |
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|
10 – 1000 |
1.0 – 100 |
1.High density
2.High wear-resistant
3.High thermal conductivity with low thermal expansion coefficient
4.High vibration-damping capacity and high Young's modulus
5.High oxidation resistance and corrosion resistance
| Atomic number | 74 |
| CAS number | 7440-33-7 |
| Atomic mass | 183.84 [g/mol] |
| Melting point | 3420 °C |
| Boiling point | 5555 °C |
| Density at 20 °C | 19.25 [g/cm3] |
| Crystal structure | Body-centered cubic |
| Coefficient of linear thermal expansion at 20 °C | 4.4 × 10-6 [m/(mK)] |
| Thermal conductivity at 20 °C | 164 [W/(mK)] |
| Specific heat at 20 °C | 0.13 [J/(gK)] |
| Electrical conductivity at 20 °C | 18.2 × 106 [S/m] |
| Specific electrical resistance at 20 °C | 0.055 [(Ωmm2)/m] |
|
Model Number
|
W1
|
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|
Shape
|
customized
|
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|
Chemical Composition
|
99.95% W |
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semiconductor
chemical vapor deposition (CVD)
physical vapor deposition (PVD) display
