Tungsten target for electrochromic glass

Paramater

Manufacturing Range (Tungsten Planar Sputtering Target)

Rectangle

Length (mm)

Width (mm)

Thickness(mm)

Custom Made

10 – 3000

10 – 800

1.0 – 50.8

Circular

Diameter (mm)

Thickness (mm)

10 – 1000

1.0 – 100

1.High density
2.High wear-resistant
3.High thermal conductivity with low thermal expansion coefficient
4.High vibration-damping capacity and high Young's modulus
5.High oxidation resistance and corrosion resistance

Atomic number 74
CAS number 7440-33-7
Atomic mass 183.84 [g/mol]
Melting point 3420 °C
Boiling point 5555 °C
Density at 20 °C 19.25 [g/cm3]
Crystal structure Body-centered cubic
Coefficient of linear thermal expansion at 20 °C 4.4 × 10-6 [m/(mK)]
Thermal conductivity at 20 °C 164 [W/(mK)]
Specific heat at 20 °C 0.13 [J/(gK)]
Electrical conductivity at 20 °C 18.2 × 106 [S/m]
Specific electrical resistance at 20 °C 0.055 [(Ωmm2)/m]
Model Number
W1
Shape
customized
Chemical Composition

99.95% W

Quality&Inspection

Applications

 semiconductor

chemical vapor deposition (CVD)

physical vapor deposition (PVD) display

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