|
Material: |
Molybdenum |
Shape: |
Plate |
|
Purity: |
99.5% |
Density: |
10.2g/cm³ |
|
Color: |
Silver |
Standard: |
ASTM B386 |
|
Size: |
Cusomized |
Surface: |
Bright |
|
High Light: |
99.95% Molybdenum Sputtering Target Molybdenum Sputtering Target 10.2g/Cm3 Molybdenum Plate 10.2g/Cm3 |
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In the electronics industry molybdenum sputtering targets are mainly used for flat panel displays, electrodes and wiring materials for thin film solar cells and barrier layer materials for semiconductors. These are based on molybdenum's high melting point, high electrical conductivity, low specific impedance, good corrosion resistance and good environmental properties.
Manufacturing Range(Molybdenum rotary sputtering targets)
|
OD(mm) |
ID(mm) |
Length(mm) |
Custom made |
|
Φ140-180mm |
Φ125-Φ135mm |
100-3300 |
Manufacturing Range (Molybdenum Planar Sputtering Target)
|
Rectangle |
Length (mm) |
Width (mm) |
Thickness(mm) |
Custom Made |
|
10 - 3000 |
10 - 800 |
1.0 - 50.8 |
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|
Circular |
Diameter (mm) |
Thickness (mm) |
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|
10 - 1000 |
1.0 - 100 |
|
Composition |
Mo (Mo1, TZM) |
|
Purity |
≥99.95% |
|
Density |
10.2 g/cm3 |
|
Grain Sizes |
≤ 100 µm2 or on request |
|
Roughness |
Ra≤0.4μm |
|
Flatness tolerance |
<4um |
| Atomic number | 42 |
| CAS number | 7439-98-7 |
| Atomic mass | 95.94 [g/mol] |
| Melting point | 2620 °C |
| Boiling point | 4639 °C |
| Density at 20 °C | 10.22 [g/cm³] |
| Crystal structure | Body-centered cubic |
| Coefficient of linear thermal expansion at 20 °C | 5.2 × 10-6 [m/(mK)] |
| Thermal conductivity at 20 °C | 142 [W/(mK)] |
| Specific heat at 20 °C | 0.25 [J/(gK)] |
| Electrical conductivity at 20 °C | 17.9 × 106 [S/m] |
| Specific electrical resistance at 20 °C | 0.056 [(Ωmm2)/m] |
Thin-film solar industry, solar cells, surface engineering
Touch control industry, flat panel displays
Semiconductor industry, microelectronics, automotive lights and decorative coating,
Coated glass industry(including architectural glass, automotive glass, optical glass and other films), etc.
