Molybdenum Disc

Chemical requirements

Element

Ni

Mg

Fe

Pb

Al

Bi

Si

Cd

Ca

P

Concentration(%)

0.003

0.002

0.005

0.0001

0.002

0.0001

0.002

0.0001

0.002

0.001

Element

C

O

N

Sb

Sn

Mo

 

 

 

Concentration(%)

0.01

0.003

0.003

0.0005

0.0001

balance

 

 

 

 

 

Parameters

Material: pure molybdenum 99.95%Min
Density:  ≥10.2g/cc
Melting point: 2610ºC
We can manufacture according to customer required

Excellent conductivity of electricity

Resistance of high temperature

High melting point, high oxidation and erosion resistance.

 

Atomic number 42
CAS number 7439-98-7
Atomic mass 95.94 [g/mol]
Melting point 2620 °C
Boiling point 4639 °C
Density at 20 °C 10.22 [g/cm³]
Crystal structure Body-centered cubic
Coefficient of linear thermal expansion at 20 °C 5.2 × 10-6 [m/(mK)]
Thermal conductivity at 20 °C 142 [W/(mK)]
Specific heat at 20 °C 0.25 [J/(gK)]
Electrical conductivity at 20 °C 17.9 × 106 [S/m]
Specific electrical resistance at 20 °C 0.056 [(Ωmm2)/m]

Quality&Inspection

Applications

Molybdenum sputtering targets can form thin films on various substrates. This sputtering film is widely used in electronic components and electronic products, such as TFT-LCD (Thin Flim Transitor - Liquid Crystal Displays, Thin Flim Transitor - Liquid Crystal) which is currently widely used. Displays), plasma displays, inorganic light-emitting diode displays, field emission displays, thin-film solar cells, sensors, semiconductor devices and field-effect transistor gates with tunable work function CMOS (complementary metal oxide semiconductor), etc.

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