|
Element |
Ni |
Mg |
Fe |
Pb |
Al |
Bi |
Si |
Cd |
Ca |
P |
|
Concentration(%) |
0.003 |
0.002 |
0.005 |
0.0001 |
0.002 |
0.0001 |
0.002 |
0.0001 |
0.002 |
0.001 |
|
Element |
C |
O |
N |
Sb |
Sn |
Mo |
|
|
|
|
|
Concentration(%) |
0.01 |
0.003 |
0.003 |
0.0005 |
0.0001 |
balance |
|
|
|
|
Material: pure molybdenum 99.95%Min
Density: ≥10.2g/cc
Melting point: 2610ºC
We can manufacture according to customer required
Excellent conductivity of electricity
Resistance of high temperature
High melting point, high oxidation and erosion resistance.
| Atomic number | 42 |
| CAS number | 7439-98-7 |
| Atomic mass | 95.94 [g/mol] |
| Melting point | 2620 °C |
| Boiling point | 4639 °C |
| Density at 20 °C | 10.22 [g/cm³] |
| Crystal structure | Body-centered cubic |
| Coefficient of linear thermal expansion at 20 °C | 5.2 × 10-6 [m/(mK)] |
| Thermal conductivity at 20 °C | 142 [W/(mK)] |
| Specific heat at 20 °C | 0.25 [J/(gK)] |
| Electrical conductivity at 20 °C | 17.9 × 106 [S/m] |
| Specific electrical resistance at 20 °C | 0.056 [(Ωmm2)/m] |
Molybdenum sputtering targets can form thin films on various substrates. This sputtering film is widely used in electronic components and electronic products, such as TFT-LCD (Thin Flim Transitor - Liquid Crystal Displays, Thin Flim Transitor - Liquid Crystal) which is currently widely used. Displays), plasma displays, inorganic light-emitting diode displays, field emission displays, thin-film solar cells, sensors, semiconductor devices and field-effect transistor gates with tunable work function CMOS (complementary metal oxide semiconductor), etc.
