Sapphire crystal growth furnace thermal field: large size manufacturing capacity.
|
Diameter |
Length |
Purity |
Density |
Service temp |
Vapor pressure |
blackness |
Coefficient of thermal expansion |
|
3-100mm |
3~3000mm |
99.95% |
19.2g/cm3 min. |
3400 ℃ |
10-6 Pa |
0.295 |
4.98*10-6 |
High melting point (3410°C)
Low thermal expansion
High electrical resistance
Low vapour pressure
Good thermal conductivity
High density
| Atomic number | 74 |
| CAS number | 7440-33-7 |
| Atomic mass | 183.84 [g/mol] |
| Melting point | 3420 °C |
| Boiling point | 5555 °C |
| Density at 20 °C | 19.25 [g/cm3] |
| Crystal structure | Body-centered cubic |
| Coefficient of linear thermal expansion at 20 °C | 4.4 × 10-6 [m/(mK)] |
| Thermal conductivity at 20 °C | 164 [W/(mK)] |
| Specific heat at 20 °C | 0.13 [J/(gK)] |
| Electrical conductivity at 20 °C | 18.2 × 106 [S/m] |
| Specific electrical resistance at 20 °C | 0.055 [(Ωmm2)/m] |
sapphire furnaces
